Through UV-Vis, XRD, SEM and AFM characterizations, the difference in electron mobility between 1 and 2 can be.
利用空间电荷限制电流(SCLC)法测试了二种氟代苝酰亚胺的电子迁移率,一种是N,N'-二(五氟代苯基)-3,4,9,10-苝四羧基二酰亚胺(1),另一种是N,N'-二(1,1-二氢十五氟代辛基)-3,4,9,10-苝四羧基二酰亚胺(2)。
An electron mobility of 6×10~4 cm~2/Vs with a carrier density of 2.
结果表明,电离杂质散射控制所有样品在低温时的电子输运过程,而高温时材料的电子迁移率主要由极性光学声子的散射过程决定;C的沾污对石墨舟中生长的InAs0。
An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper.
提出了一个应变硅沟道电子迁移率解析模型。
Analytical model for the electron Hall mobility in the n-type 4H-SiC;
n型4H-SiC电子霍耳迁移率解析模型
With analysis of conduction band structure and isotropic relaxation time approximation,an analytical model for the electron Hall mobility and Hall scattering factor of n-type 6H-SiC is proposed.
基于对自身能带结构的分析以及各向同性弛豫时间近似法,采用三椭球等能面、抛物线性简化,建立了适于模拟n型6H-SiC电子霍耳迁移率和霍耳散射因子的解析模型,精确描述了不同散射机制对于6H-SiC低场电子输运特性的影响。
high electron mobility transistor
高电子迁移率晶体管
A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;
AlGaN/GaN高电子迁移率晶体管的模型研究
Monte Carlo Study of Channel Mobility in SiC MOSFET
SiC MOSFET沟道电子迁移率的Monte Carlo模拟研究
Optical Phonon Influence on the Mobility of Electrons in AlN/GaN Quantum Wells;
光学声子对AlN/GaN量子阱中电子迁移率的影响
Pressure Effect on the Mobility of Electrons in Quantum Wells with Finite Barriers;
有限深量子阱中电子迁移率的压力效应
Electron Mobility in Heterojunctions and Its Hydrostatic Pressure Effect;
半导体异质结中的电子迁移率及其压力效应
MBE Growth of InP Based PHEMT Epitaxial Materials;
分子束外延生长InP基赝配高电子迁移率晶体管外延材料
Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;
压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响
Monolithic Integration of GaAs Enhancement/depletion-mode PHEMTs
单片集成GaAs增强/耗尽型赝配高电子迁移率晶体管
The mobility value used is that of the minority carrier.
所采用的迁移率值都是少子迁移率。
electrophoretic mobility shift assay
电泳迁移率变动分析
ion-mobility spectrometry
离子迁移率光谱测定法
cataphoretic migration speed
阳离子电泳迁移速度
High-mobility transparent conducting IMO thin films grown by reactive electron beam vapor deposition
电子束沉积生长高迁移率IMO透明导电薄膜的研究
The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.
Nonlinear Electrical Transport Properties and Mobility in Colossal Magnetoresistance (CMR) Field-effect Transiators (FETs);
LCMO巨磁阻场效应晶体管的非线性电子输运特性及迁移率的研究
The magnitude of electron mobility is indicative of the frequency of the events that free electrons, being acted on by an electric field, are scattered by imperfection in the crystal lattice.
自由电子在电场的作用下，会由于晶体中的杂质而发生散射，迁移率就是指这种散射发生的频率。
A Test Device of the Drift Mobility for Non-Crystal Photoconductive Materials
非晶光电导材料漂移迁移率的测试装置