The distribution of C, O, N, Cl elements in ternary polyurethane/epoxy/poly-B-propylene glycol diacrylate(PUR/EP/PPGDA) IPNs' surface was analyzed by X-ray photoelectron spectroscopy and the internality was analyzed with argon ion etching.
用X射线光电子能谱(XPS)分析了以聚氨酯(PUR)为第一网络的PUR/环氧树酯/聚-β-丙二醇二丙烯酸酯互穿聚合物网络(PUD/EP/PPGDA IPN)弹性体的表面元素分布,并用氩离子刻蚀进行材料内部元素分析。
In order to make high quality junctions we have done some researches on reaction ion etching(RIE) method and ion etching method.
在制备所有的NbN超导隧道结的过程中,为了得到良好的隧道结,刻蚀是很关键的一步,我们对反应离子刻蚀(RIE)和离子刻蚀两种不同的方法进行了研究比较。
This paper applies the thermal spikes effect and ion etching effect to explain the formation of DLC films by analyzing the effects of energy particles.
本文通过分析荷能离子的作用，应用热峰效应和离子刻蚀效应来解释ＤＬＣ膜的形
Research on array carbon nanotubes film without substrate by centrifugal infiltration and plasma etching
离心渗透等离子刻蚀法制备无基底阵列式碳纳米管复合膜
In the plasma-etching mode the passivation layer that is formed on the surface is likely to be thicker than in the case of RIE.
在等离子刻蚀模式下，表面形成了比使用RIE情况下更厚的钝化层。
plasma sputter combined etching
等离子溅射复合刻蚀
Acceptable Error of Etching Depth in Ion Beam Etching Microlens
离子束蚀刻微透镜中蚀刻深度允许误差的研究
Generic specification of ion beam etching system
GB/T15861-1995离子束蚀刻机通用技术条件
NUMERICAL STUDIES ON ETCH PROFILES IN HIGH-DENSITY PLASMA;
高密度等离子体刻蚀轮廓的数值研究
Investigation of Etching SiCOH Films by Dual-Frequency Capacitively Coupled Plasma
SiCOH薄膜的双频等离子体刻蚀研究
The Mechanism Analysis of HgCdTe pn Junction Formed by Ion Beam Milling
离子束刻蚀HgCdTe成结机制分析
Simulations of Plasma Etching Based on Diffusion Limited Erosion Model
基于扩散限制刻蚀模型的等离子体刻蚀模拟研究
study on step sidewall tilt in ion beam etching of Fresnel lens
离子束刻蚀过程中台阶侧壁倾斜现象研究
APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY
离子束刻蚀技术在约瑟夫逊器件工艺中的应用
Fabrication of 128×128 Area Silicon Field Emission Arrays Using Ar Ion Beam Etching
128×128元硅场发射阵列的氩离子束刻蚀制作
Investigation of Inductively Coupled Fluorocarbon Plasma and Etching of SiO_2;
碳氟感应耦合等离子体及其SiO_2介质刻蚀研究
The Study of the Etching Process with RF Cold Plasma at Atmospheric-pressure;
常压射频冷等离子体在刻蚀工艺中的应用研究
Inductive Couple Plasmas Etching Processing of InSb Wafer
电感耦合等离子体刻蚀InSb芯片工艺的研究
Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction (PartⅡ)
离子束刻蚀HgCdTe环孔pn结Ⅰ—Ⅴ、R_D—V特性的研究(下)
Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction
离子束刻蚀HgCdTe环孔pn结Ⅰ-Ⅴ、R_D-V特性的研究(上)
Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;
介质膜光栅：光刻胶掩模占宽比和离子束刻蚀槽深的监控