Effects of Quantum Confinement Effect on the Properties of Exciton in SnO_2 Nanometer Particles;
量子限域效应对二氧化锡纳米微粒激子特性的影响
Because of the effect of the three dimensional quantum confinement, semi-conductor nano-granular materials embedded in medium matrix presents optical properties which are completely different from the corresponding bulk materials, such as non-linear optical properties, visible region photoluminescence, etc.
由于三维量子限域效应的作用,半导体纳米颗粒镶嵌薄膜材料呈现出与块体材料完全不同的光学性能,如非线性光学效应、光致发光等。
The light centers of this structure are analyzed by using configuration coordinate,and the electroluminescence process of this structure is studied by using quantum confinement-luminescence center model.
利用位形坐标模型分析了锗/氧化硅纳米多层膜的发光中心,并用量子限制-发光中心模型对该纳米结构的电致发光过程作了研究,研究表明锗/氧化硅纳米多层膜的电致发光主要来自SiO2层的发光中心。
By comparison on the effects of quantum confinement and Coulomb blockade on Fermi level of metal nanocrystal,it is found that Coulomb blockade could seriously deteriorate the data retention capability of metal nanocrystal memory(MNCM)device.
对比分析讨论了量子限制效应与库仑阻塞效应对金属纳米晶费密能级的影响后,发现库仑阻塞效应会严重削弱器件数据保持能力。
Several models were proposed according to various experimental results: quantum confinement model, surface state recombination model, siloxene derivatives model, and phonon assistant transition model, etc.
根据各自的实验结果提出了不同的模型 :量子限制、表面态复合、硅氧烷及其衍生物、以及声子辅助跃迁等 。
We report recent experimental evidence for the quantum confinement effect in 3C-SiC nanoparticles.
报道了关于3C-SiC纳米颗粒量子限制效应的实验证据。
The preparation and the quantum confinement effects of amorphous St3N4 nanoparticles are reported in this paper.
本文报道了非晶氨化硅纳米粒子的制备及量子限制效应。
For silicon nanostructures,the traditional Tauc method that succeeded in amorphous material is not applicable since the optical absorption of silicon nanostructures would be affected not only by the quantum confinement effect of nanoparticals in the films but also by their concomitant microstructural disorder.
采用量子限制效应模型对镶嵌有纳米非晶硅粒子的氢化氮化硅薄膜的光吸收进行了理论模拟,探讨了由吸收谱分析给出该结构薄膜光学参数的方法,并通过对不同氮含量样品的讨论给出了量子限制效应和纳米硅粒子表面的结构无序对薄膜光吸收特性的影响规律。
The results show that ion implantation makes free Si in the material change to SiNn(n=l, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.
荧光谱研究表明纳米Ｓｉ３Ｎ４具有明显的量子限制效应，并且荧光峰的位置和强度存在不稳定性。
The quantum confinement effect of ZnO nano-particles and the laser scattering characteristic of particles with different scale, which are irradiated with different rays, are studied.
研究了纳米ZnO的量子限域效应和不同粒径对于不同激光的散射特性 ,从实验和理论两方面验证了纳米材料的光学特性 。
Both peaks were influenced by quantum confinement effect.
光致发光光谱包含两个发光峰 :一个是紫外激子发射 ,另一个是处于绿光区的杂质或缺陷发射 ,均受量子限域效应调制。
Photoluminescence can be obtained from silicon based on the compound films with silicon quantum dots embedded due to quantum confinement effect.
在硅基半导体中埋置的硅量子点因量子限域效应而具有光致发光的性能,是一种实现硅基光电集成很有前途的材料。
Then,we got quantum confinement effects of the lowest conduction band states in semiconductor quantum dots of four-teen semiconductor.
采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。