Effect of ionic vacancies on potential barrier at grain boundaries in BaTiO_3.;
钛酸钡陶瓷离子缺位对晶界势垒的影响
How to analyze particle wavefunction of tunneling rectangular potential barrier——On an alteration in the new printing of Atomic Physics by Professor Chu Shenglin;
如何分析隧穿直角势垒的粒子波函数——评褚圣麟先生《原子物理学》在新印本中的一个变动
The results show that the probability crossing cell membrane is influenced by the ion-energy in the cell membrane channel, height and width of the barrier.
本文提出了细胞膜通道中离子跨膜运输的物理图象并通过数值模拟,研究了离子跨膜运输的几率对电磁场的响应,认为膜通道内离子的能量、势垒的高度以及势垒的宽度均对跨膜运输的离子的几率产生影响。
The field emission of diamond film involves the electrons travel from the negative end of the power supply, through the various interfacial contacts, through the bulk of the film itself, to the film surface,then tunnel through the potential barrier,propagate through the vacuum gap, before finally reaching the anode.
金刚石膜场致发射过程是电子从导电基底开始,经基底/金刚石界面、金刚石薄膜体内传输到表面,然后穿过表面势垒进入真空、经真空电场加速到达阳极的一个复杂过程。
The form of MgSO\-4 dosing in varistor ceramic lattice as shown in microtexture graph and its effect on ZnO crystal barrier is briefly analyzed.
同时 ,对 Mg SO4在高压氧化锌压敏电阻器陶瓷中的存在形式和显微结构以及对 Zn O晶界势垒的影响进行了简要分析。
Making use of the square-potential barrier to describe the influence of the insulating layer on the quasi-particle transport in normal metal/insulator/superconductor (NIS) tunnel junctions, we calculate the quasi-particle transport coefficients and the differential conductance using the Bogoliubov-de Gennes(BdG)equation and Blonder-Tinkham-Klapwijk(BTK) theory.
在正常金属 /绝缘层 /s波超导隧道结 (NIS结 )中 ,以方势垒描述绝缘层对准粒子输运的影响 ,运用Bogoliubov-deGennes(BdG)方程、Blonder-Tinkham-Klapwijk(BTK)理论 ,计算了NIS隧道结中的准粒子输运系数和微分电导 。
Taking into account the impurities scattering in the normal metal region, using square-potential barrier to describe the insulating layer, we study further the tunneling spectrum of the normal metal/insulating layer/s-wave superconductor tunnel junctions making use of Bogoliubov-de Gennes(BdG) equation and Blonder-Tinkham-Klapwijk(BTK) theory.
以方势垒描述绝缘层,考虑正常金属区域的杂质散射,运用Bogoliubov-deGennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论,对正常金属/绝缘层/s波超导隧道结(NIS结)中的隧道谱作进一步研究。
Density functional theory B3LYP method is carried out to investigate the effect of substituent on the reaction barrier of intramolecular α-hydrogen transfer from alkyl to alkylidyne ligands in a series of organometallic chromium complexes (R3)(R4)Cr(≡CH)(CHR1R2).
确定了反应物、过渡态和产物的几何结构和反应势垒。
Calculations results shows that all six reactions are exothermic and the reaction barrier is low.
本论文采用密度泛函理论B3LYP方法对五线态MnSalen(O)(R′)与取代乙烯CH_2=CHR环氧化反应中取代基对反应势垒的影响进行了理论研究。
schottky barrier photodiode
肖特基势垒光电二极管
cottrell lomer barrier
科特雷耳 洛末势垒
metal semiconductor barrier
金属 半导体接触势垒
ping-pong memory
乒乓式电位势垒存储器
schottky gate fet
肖特基势垒栅场效应晶体管
schottky barrier mos
肖特基势垒栅金属氧化物半导体
Schottky-barrier avalanche photodiode
肖特基势垒雪崩光电二极管
baritt oscillator
势垒注入渡越时间二极管振荡器
enhancement type schottky barrier fet
增强型肖特基势垒场效应晶体管
The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors
多晶铁电半导体晶界处的肖特基势垒
Tunneling of Electrons Through Parabolic Quantum Well Structures with Double Barriers;
双势垒抛物量子阱结构中的电子隧穿
A Research on the Spin-Pump Current in Single Potential Barrier & Quantum Well;
单势垒量子阱中自旋抽运电流的研究
Particle tunneling in arbitrary potential barriers: a transfer matrix method;
粒子在任意势垒中的隧穿:转移矩阵法
Probability of Atom β~+ Decay s Break though Coulomb Potential Barrier;
原子β~+衰变对Coulomb势垒的穿透概率
As an example, Schottky barrier diode characteristics is simulated using this method.
以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。
This probability is related to the quantum wave amplitude in the barrier region.
这个几率与势垒区内的量子波振幅有关。
China s Foreign Trade Faces in the New Situation of Trade Barriers Running up;
贸易壁垒高筑形势下的我国对外贸易
The Status Quo of the Japanese Technical Barriers and Their Trend;
日本技术性贸易壁垒现状及发展趋势