In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect of the tapered region was also studied.
为了保证选择区域内的MQWs材料的均匀性,我们采用了新型的渐变掩蔽图形,并且运用这种新型渐变掩蔽图形,研究了渐变区域的过渡效应对材料生长的影响。
