From the charge neutrality,by analyzing the relation of impurity density and minority carrier con-centration under different temperature,calculating the rate of unionized dopant,ionization of dopant in single-doped semiconductor is determined and the formulae of carrier concentrations are deduced.
利用电中性条件,通过分析不同温度下杂质浓度和少子浓度的相对关系以及杂质未电离比率,讨论了如何判定具有单一杂质的半导体中杂质的电离状态并计算相应状态下的载流子浓度;通过判定少子浓度是远低于还是远高于杂质浓度,或是与杂质浓度相当,可有效区分饱和电离区、过渡区以及本征电离区并得到有效的载流子浓度计算公式;通过计算未电离杂质的比率可有效判定杂质半导体是处于低温弱电离区、中间电离区或饱和电离区,并得到其载流子浓度计算公式;最后通过实例说明判定方法的应用并计算相应的载流子浓度。
Decision of Ionization of Dopant in Single-doped Semiconductor
单一杂质半导体中杂质电离状态判定
"Intrinsic semiconductors have a high degree of chemical purity, But their conductivity is poor. Extrinsic semiconductors contain impurities that produce much greater conductivity."
本质半导体的化学纯度很高,而电导率很低;杂质半导体含有杂质,造成更高的电导率。
When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors.
如果半导体的电学性质归因于其中的杂质原子，那么它将被称为杂质半导体。
Formulae of Fermi Energy in Poly-doped Semiconductor and Algorithm Computation
混合杂质半导体费米能级公式及数值计算
"Such materials can be converted into the technologically more important extrinsic semiconductors by addition of small amounts of impurities, a process called doping."
这些材料在技术上可以透过加入少量的杂质(这个过程称作掺质)而转化成更重要的杂质半导体。
Semiconductors containing such impurities are called p-type semiconductors.
含有这类杂质的半导体叫做P型半导体。
Synthesis, Doping and Optical Properties of ZnO Semiconductor Nanocrystallines;
半导体纳米ZnO的制备、掺杂及光学性质
When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
当半导体中加入了施主感受主杂质，我们就说该物质“掺杂”了。
Theoretical Studies of Quantum Dots and Effect of Magnetic Fields and an Impurity;
半导体量子点的理论研究及磁场与杂质的效应
Hydrostatic Pressure Effect on Donor and Exciton in Semiconductors Quantum Wells;
半导体量子阱中的杂质态和激子的压力效应
Exciton and Impurity State in Semiconductor Quantum Wells in an Electric Field;
外电场下半导体量子阱中的激子和杂质态
Effect on optical properties of semiconductor films by Fe doping;
金属掺杂对半导体薄膜光学性质的影响
Structural Stabilities and Electronic Properties of Several Dopants and Surfaces of Semiconductors
半导体掺杂和表面若干稳定结构及其性质
Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots
纤锌矿氮化物半导体椭球形量子点杂质态
Transistors consist of layers of different semiconductors produced by addition of impurities (such as arsenic or Boron) to silicon.
晶体管由不同的半导体层构成,这些半导体是将某些杂质(如砷和硼)加到纯硅中而制成。
First-principle Studies the Property of the Diluted Magnetic Semiconductors Doped with Ca、Ti、C and the Binuclear Manganese Molecular Magnet
钙、钛和碳掺杂的稀磁半导体及双核锰分子磁体性质的研究
add impurities to (a semiconductor) in order to produce or modify its properties; in electronics.
给半导体加上杂质以便减少或改变它的道具；一般用在电子学中。
The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB/T4298-1984半导体硅材料中杂质元素的活化分析方法