Progress of diamond tools for cutting silicon material in semiconductor Industry;
半导体工业硅材料加工用金刚石工具的发展
Semiconductor Properties of Anodic Oxide Film Formed on Aluminum;
铝阳极氧化膜的半导体特性
The Pointwise Estimates of Solution for One-dimensional Hydrodynamic Model for Semiconductors;
一维半导体流体动力学模型的解的逐点估计(英文)
Preparations of Low Dimensional Oxide Semiconductors and Constructions of Gas-sensing Devices;
低维半导体氧化物的合成及气体传感器的研制
The Analysis of Drift-diffusion and Hydrodynamic Models for Semiconductors;
半导体材料科学中的漂移扩散模型和流体动力学模型分析
The efFect of sintering temperature on semiconducting under the conditions of high and low La_2O_3 additions was also studied.
研究了２５％Ｎ_２＋７５％Ｈ_２（体积分数）强还原烧结气氛下施主添加剂 Ｎｂ_２Ｏ_ ５、Ｌａ_２Ｏ_３对ＳｒＴｉＯ３双功能陶瓷半导化的作用规律，结果表明随着添加量的增大， Ｎｂ_２Ｏ_５掺杂试样的表观电阻率单调下降，而 Ｌａ_２Ｏ_３掺杂试样的表观电阻率呈“ Ｕ”形曲线。
Strontium lead titanate materials of V shaped positive temperature coefficient characteristics came into being semiconductor because yttrium sol dopants were used as semiconducting additives.
利用Ｙ溶胶添加剂对钛酸锶铅Ｖ型正温度系数材料进行了半导化。
The semiconducting mechanism, applications and fabrication techniques ofITO films are reviewed.
综述了ITO薄膜的半导化机理、应用和制备工艺。
The scattering characteristics of the Ⅱ-Ⅵ semiconductor were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure.
用有限元和场匹配相结合的方法分析了Ⅱ-Ⅵ族半导体材料的散射特性。
Many semiconductor-based composite materials have been developed and applied.
综述了半导体多相光催化的基本原理、半导体基纳米复合材料的基本结构、制备方法及复合材料在光电化学方面对材料性能的影响。
The semiconductor mechanism is explained.
研究烧成条件对产物的影响,讨论每种掺杂剂对材料的PTC热敏特性及微观形貌的影响,确定每种掺杂剂的最佳掺量,并对其半导机理进行分析。