Linear amplification characteristic of HD74LS00P integrated NAND gate;
HD74LS00P集成与非门的线性放大性能研究
The article states three disadvantages existing in the CMOS NAND gate , the output resistance Ro is influenced by the condition of the input terminal; the output high or low frequency is influenced by the quantities of the input terminal; the attribute of voltage transmit is influenced by the working conditions of the input terminal.
论述了CMOS与非门存在的三个缺点:输出电阻Ro受输入端状态的影响,输出的高、低电平受输入端数目的影响,输入端工作状态不同时对电压传输特性的影响。
The article discusses the amplitude-frequency of RC coupling magnifier assuming the form of its self-supporting working voltage on the basic of experiments, and proves the feasibility to apply the feature of HD74lSOOP NAND gate’s linearity from a certain perspective.
以实验为依据,研究了自偏压式RC耦合放大器的幅频特性,验证了HD74LS00P与非门线性运用的可行性。
This paper has presented a method of designing the simplest logic circuits with NOR gates with Karnaugh map.
给出了采用或非门、利用卡诺图设计最简逻辑电路的方法,并用实例论证这个方法是最简捷的方法,同时也具有一般性。
Based on the I-V characteristics of single-electron transistor and the idea of MOS digital logic circuits,an inverter using the hybrid SET/MOS transistors was proposed and the NOR gate was expanded.
基于SET的I-V特性以及SET与MOS管互补的特性,以MOS管的逻辑电路为设计思想,首先提出了一个SET/MOS混合结构的反相器,进而推出或非门电路,并最终实现了一个唯一地址译码器。