A new method of transient drifting electric field for ion mobility spectrometer(IMS) was presented.
设计和制备了一种用于离子迁移率谱仪(IMS)的瞬态漂移电场控制电路系统,主要包括时序控制电路和高速开关电路,可以按实验要求调整瞬态漂移电场的强度及周期。
In the past decade, ion mobility spectrometer (IMS) has undergone significantadvancements.
近年来，离子迁移率谱仪(IMS)发展迅猛，被广泛应用于测定痕量的毒品、爆炸物以及环境污染物等。
A new method of transient drifting electric field for ion mobility spectrometer(IMS) was presented.
设计和制备了一种用于离子迁移率谱仪(IMS)的瞬态漂移电场控制电路系统,主要包括时序控制电路和高速开关电路,可以按实验要求调整瞬态漂移电场的强度及周期。
In the past decade, ion mobility spectrometer (IMS) has undergone significantadvancements.
近年来，离子迁移率谱仪(IMS)发展迅猛，被广泛应用于测定痕量的毒品、爆炸物以及环境污染物等。
ion-mobility spectrometry
离子迁移率光谱测定法
Application of ion mobility spectrometer for rapid drug detection;
应用离子迁移率谱仪技术快速检测毒品的研究
The mobility value used is that of the minority carrier.
所采用的迁移率值都是少子迁移率。
ion mobility isotope separation
离子迁移同位素分离
high electron mobility transistor
高电子迁移率晶体管
Langevin ion-mobility theories
朗之万离子迁移理论
cataphoretic migration speed
阳离子电泳迁移速度
A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;
AlGaN/GaN高电子迁移率晶体管的模型研究
Monte Carlo Study of Channel Mobility in SiC MOSFET
SiC MOSFET沟道电子迁移率的Monte Carlo模拟研究
Optical Phonon Influence on the Mobility of Electrons in AlN/GaN Quantum Wells;
光学声子对AlN/GaN量子阱中电子迁移率的影响
Application of VUV-Ion Mobility Spectrometry for the Analysis of Volatile Organic Compouds;
VUV电离离子迁移谱技术在VOCs测量中的应用
Study of Transport and Separation of Matal Ions with Strip Dispersion Hybrid Liquid Membrane;
反萃分散组合液膜迁移和分离金属离子的研究
Pressure Effect on the Mobility of Electrons in Quantum Wells with Finite Barriers;
有限深量子阱中电子迁移率的压力效应
Research on the Ion Migration of 500kV DC Ceramic Support Insulators;
500kV直流支柱式瓷绝缘子离子迁移的研究
The Development of a New Type of Measuring System of Ion Migration Test for Insulators;
新型绝缘子离子迁移试验测量系统的研制
Electron Mobility in Heterojunctions and Its Hydrostatic Pressure Effect;
半导体异质结中的电子迁移率及其压力效应
Expression and Significance of High Mobility Group Protein A in Endometrial Carcinoma
高迁移率族蛋白A在子宫内膜癌中的表达及意义
The Study on Enhancement Mechanism and Model of Strained Si Carrier Mobility
应变硅载流子迁移率增强机理及模型研究