Investigation of trapping states in the grain boundaryof low breakdown voltage ZnO ceramics varistors;
低压ZnO压敏陶瓷晶粒边界电子陷阱态的研究(英文)
The activating energy is associated with adsorption and reaction of O2 at the grain boundary.
这些激活能与晶界氧的吸附及氧与晶粒边界的作用有关,在晶界吸附的O′和O〞作为受主态,有利于形成肖特基势垒。
The effects of dopants on electrical properties of ZnO grain boundary are analyzed.
探讨了热处理气氛对 Zn O晶粒边界电性能的作用机理。