It was found that under experimental conditions, these anions have no influence on crystallographic forms of ZnS; Sphalerite-type CdS was obtained from nitrate or sulphate solution and wurtzite-type CdS was obtained from chloride solution.
结果表明,SO2-4、NO-3和Cl-对ZnS粉末晶型基本上没有影响;而在NO-3、SO2-4体系中得到闪锌矿型CdS粉末,在Cl-体系中,得到纤维锌矿结构CdS粉末。
XRD pattern of the powder indicates that the hexagonal wurtzite ZnO nanocrystals can be obtained when the precursor calcinated at 300℃for 2h.
结果表明:所得前驱体在253℃左右分解为六方纤锌矿型纳米ZnO,颗粒大小约为15～20nm,粒径分布窄,基本无团聚,粉体的比表面积为64。
The energy levels of bound polaron in the wurtzite nitride infinite quantum well are studied by using Lee-Low-Pines(LLP) transformation method.
采用改进的LLP变分方法,研究纤锌矿氮化物无限深量子阱材料中束缚极化子基态能量和基态结合能、第一激发态能量和第一激发态结合能、第一激发态到基态的跃迁能量等物理量随着量子阱宽度的变化关系。
Based on the dielectric continuum phonon model, uniaxial model and Lei-Ting balance equation, the electronic mobility parallel to the interfaces for wurtzite (WZ) and zincblende (ZB) AlN/GaN quantum-well (QW) heterostructures is discussed by taking the influence of confined and interface phonon modes into account.
本文在介电连续模型和单轴模型的框架下，采用雷-丁平衡方程理论，考虑有限深量子阱中界面光学声子模和局域体光学声子模的影响，分别计算了纤锌矿型和闪锌矿型AlN／GaN量子阱中电子平行于异质结界面方向的迁移率，并给出迁移率随阱宽及温度的变化关系。
First-principle Calculation of Electronic Structure of Wurtzite ZnO Crystal
纤锌矿型氧化锌电子结构的第一性原理计算
Models of Compensation Ratio and Mobility of Wurtzite n-GaN;
纤锌矿n-GaN的补偿度及迁移率模型
Monte-carlo Simulation on Four-valley Model Wurtzite ZnO;
基于多能谷纤锌矿相ZnO的Monte-Carlo模拟
Carrier Transport in Wurtzite GaN Using Monte Carlo Method;
纤锌矿GaN载流子输运的蒙特卡罗模拟
The Energy of an Exciton in a Wurtzite GaN/Al_xGa_(1-x)N Quantum Well
纤锌矿GaN/Al_xGa_(1-x)N量子阱中激子能量
First-principle Study of Electronic and Optical Properties of Wurtzite Structure GaN
纤锌矿GaN光电性质的第一性原理研究
Quasiparticle band structures of wurtzite ZnO
纤锌矿结构ZnO的准粒子能带结构(英文)
Energy of Bound Polaron in Wurtzite GaN/AlN Quantum Well
纤锌矿GaN/AlN量子阱中束缚极化子能量
With increasing pressure,the wurtzite structre was transformed to zinc blende structure at 11.2 GPa.
压力达到11.2 GPa时,纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构。
The raw materials contain two structures of ZnS,which are wurtzite and zinc blende respectively.
常压下纳米硫化锌球壳为纤锌矿结构和闪锌矿结构共存的混相结构。
Energy of the Bound Polaron in Wurtzite GaN/Al_xGa_(1-x)N Quantum Well;
纤锌矿GaN/Al_xGa_（1-x）N量子阱中束缚极化子能量
Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots
纤锌矿氮化物半导体椭球形量子点杂质态
Pressure and Polaron Effect on the Binding Energies of Impurity States in Wurtzite Nitrides Semiconductor;
纤锌矿氮化物半导体杂质态的结合能及压力和极化子效应
First-principles Study of Cadmium Sulfide Clusters and S Doped Wurtzite ZnO;
硫化镉团簇与S掺杂纤锌矿ZnO的第一性原理研究
The Full Band Ensemble Monte Carlo Simulation of Hole Transport Properties for Wurtzite GaN;
纤锌矿相GaN材料空穴输运特性的全带多粒子Monte Carlo模拟研究
Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;
压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响
Phase Transition,Elastic Property and Electronic Structure of Wurtzite and Rocksalt ZnO
纤锌矿和岩盐结构ZnO的相变、弹性性质和电子结构研究
First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnO
S掺杂纤锌矿ZnO晶体结构及电子性质的第一性原理研究