1.The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
2.Thermite is aluminum powder and a metal oxide which produces an aluminothermic reaction known as a thermite reaction.
铝热是铝粉，一种金属氧化剂，能产生我们所谓的铝热反应。
3.In addition, it was found that the metal oxide could be repeatedly used up to 5 cycles without any significant loss in its surface activity.
经测试后显示，研究中所使用的金属氧化物可重复使用五次，且金属的表面活性并不会被降低。
4.Recently, transition metal oxide catalysts used for oxidation of CO and hydrocarbons at low temperature have attracted much attention.
目前，非贵金属类的过渡金属氧化物催化剂用于CO和烃类的低温氧化受到了广泛关注。
5.These tiny semiconductors inject electrons into a metal oxide film, or "sensitize" it, to increase solar energy conversion.
这些微小的半导体把电子注入到金属氧化物薄膜中，或者说把它“敏化”，从而增强太阳能转换。
6.The metal oxide particles are preferably incorporated into the emulsion in the form of an aqueous dispersion.
金属氧化物颗粒优选以含水分散体的形式加入到乳液中。
7.and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain.
以及金属氧化物层，该金属氧化物层在该沟道层与该源极和该漏极之间形成。
8.The invention relates to a manufacture method of a trench type metal-oxide semiconductor device.
一种沟道式金属氧化物半导体元件的制作方法，其特征在于包括：提供一基板；
9.The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.
将半导体氧化层与金属氧化物层转化成一第一介电层。
10.Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。