1.This can double or triple the current carrying capacity of the control, or produce a 20A control with a single MOSFET.
这可以双重或三重目前的载客量的控制，或出示一20A条控制与一个单一的MOSFET。
2.as such, a circuit designed with L-mosfet usually can work fine without a Vbe (or Vgs) multiplier for thermal compensation.
同样地，用L-mosfets设计的线路不用Vbe（或Vgs）倍增器作温度补偿可以工作得非常好。
3.From the late eighties to the early nineties, IGBT become a new composite device, which brings together the advantages of MOSFET and GTR.
IGBT作为八十年代末，九十年代初迅速发展起来的新型复合器件，它将MOSFET和GTR的优点集于一身。
4.In a hard switching mode the turning on of the MOSFET is not synchronized with the drain-source voltage value.
在硬开关里场效应晶体管的开启波形拐点并不和漏源极电压值同步。
5.The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管（MOSFET）的作品在一个类似的原则，但二极管的MOSFET内掩埋。
6.This increase of the reflected voltage results in a higher drain-source voltage blocking MOSFET and longer duty cycles.
增加的反射电压导致使用更高漏源极击穿电压的场效应晶体管和更大的开关占空比。
7.Ultimate analysis magnetic elements' characteristic, transformer, inductance design and MOSFET switch component's shaping.
最后分析了磁性元件的特性，变压器，电感的设计和MOSFET开关器件的选型。
8.If the silicon bar is doped N, then the MOSFET is called an N-channel device.
如果掺硅栏N，则MOSFET被称为N沟道器件。
9.The Mosfet transistor has been very popular in this application as it fulfill both requirements better then the bipolar transistor.
MOSFET的晶体管一直很受欢迎，在此应用程序，因为它fullfils双方的要求，更好的话，双极型晶体管。
10.No external sense resistor is needed, and no blocking diode is required due to the internal MOSFET architecture.
由于采用了内部MOSFET架构，所以不需要外部检测电阻器和隔离二极管。