1.The buffers can be a pair of JFET op amps or two electrometers with unity-gain outputs.
该缓冲器可以是一对JFET运算放大器或者是两个具有单位增益输出的静电计。
2.In this thesis, the JFET resistance is effectively reduced by optimizing the concentration and width of JFET region.
本文通过对JFET区宽度和浓度的优化有效的降低了器件的JFET区电阻；
3.When inputs to most JFET op amps exceed the common-mode range for the part, the output may reverse polarity.
当大部分JFET运放的输入超过它的共模范围时，输出可能发生极性翻转。
4.And the output voltage drift of the circuit, which was duped to thermal drift, varied according as the different grid voltage of JFET.
在其基础上发现场效应管是引起温度漂移的主要原因，而且不同的栅极电压下的温度漂移也不相同。
5.Radiation effects and annealing characteristics of Bi-JFET operational amplifiers at different dose rates
JFET输入运算放大器不同剂量率的辐照和退火特性
6.Features of Special JFET Used in Electret Microphone
驻极体传声器专用管的特性
7.Research on the method of enhancing radiation damage of JFET-input operational amplifiers
JFET输入运算放大器的增强辐射损伤方法研究
8.A Type of Negative-resistance Device Constructed by Complementary JFET
一种互补结型场效应管负阻器件
9.Novel Structure Trench E-JFET with Adding Oxide Region beneath Gate
栅极下加氧化层的新型沟槽栅E-JFET仿真研究
10.Equivalent Input Noise of Cascade JFET Amplifier
级联结型场效应管放大电路的等效输入噪声